Tso-Ping Ma
Co-Director of the Yale Center for Microelectronic Materials and Structures.
Co-Director of the Yale-Peking Joint Center for Microelectronics and Nanotechnology
Member, International Affairs Advisory Group
Maâs research group revolves around the scientific and technological issues related to semiconductor devices, especially those involving MIS (Metal-Insulator-Semiconductor) systems. It overlaps a number of areas in materials synthesis and device physics. Most of Professor Maâs graduate students and research staff collaborate with a number of universities and major semiconductor companies in the United States and abroad.
Prof. Ma’s current research projects (short description of all projects):
- Advanced Gate Dielectrics
- Flash Memory Devices
- MIS Devices Based on InGaAs, SiC, GaN, and SiGe
- Inelastic Electron Tunneling Spectroscopy (IETS) of Ultra-Thin Dielectrics
- Ferroelectric Thin Films for Memory Technology
- Unipolar CMOS Technology
Elected to the Chinese Academy of Science as a Foreign Member (2009)
Connecticut Medal of Technology (2008)
SIA University Researcher’s Award (2006)
IEEE Andrew S. Grove Award (2005)
Pan Wen-Yuan Award (2005)
Elected to the National Academy of Engineering (2003)
B.F. Goodrich National Collegiate Inventor’s Advisor Award (1998)
Paul Rappaport Award, IEEE Electron Device Society (1998)
B.F. Goodrich National Collegiate Inventor’s Advisor Award (1993)
Connecticut Yankee Ingenuity Award (1991)
Harding Bliss Prize, Yale University (1975)
Connecticut Academy of Science and Engineering
Fellow of the Institute of Electrical and Electronic Engineers (IEEE)
Honorary Professor of Chinese Academy of Sciences
Honorary Professor of Tianjin University
Honorary Professor of Tsinghua University
Honorary Guest Professor of Peking University
Advisory Professor of Fudan University
Life member of American Physical Society
Electrical Characterization of High-k Gate Dielectrics on Semiconductors, Tso-Ping Ma, 2008, Applied Surface Science, 255(3), 672-675.
Mobility Measurement and Degradation Mechanisms of MOSFETs Made with Ultra-Thin High-k Dielectrics, Tso-Ping Ma, 2004, IEEE Trans. Electron Devices, 51(1), 98-105.
Inelastic Electron Tunneling Spectroscopy Study of Ultra-thin HfO2 and HfAlO, Tso-Ping Ma, 2003, Appl. Phys. Lett., 83(13), 2605.
High Temperature (450 C) Reliable NMISFETs on P-type 6H-SiC, X. Wang, Tso-Ping Ma, et al, 1999, Tech. Digest of Int. Elect. Dev. Meeting, paper 8.7.
Making Silicon Nitride Film a Viable Gate Dielectric, Tso-Ping Ma, 1998, IEEE Trans. Electron Devices, 45, 680.
- "A Ferroelectric Dynamic Random Access Memory", 6,067,244, 2000: With Jin-Ping Han."A Ferroelectric Dynamic Random Access Memory", 6,067,244, 2000: With Jin-Ping Han.
- "Isotopically Enriched Semiconductor Devices", 5,144,409, Sept.1, 1992.
- "Isotopically Enriched Semiconductor Devices", 5442,191, 1995.
- âA Novel Complementary Field-Effect Transistor Technologyâ, filed in 2009; Patent pending: With Minjoo Larry Lee.