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Chair, Department of Applied Physics
The research group focuses on the fabrication and the study of the physical properties of novel complex oxide and chalcogenide materials using advanced growth and characterization techniques, including molecular beam epitaxy and synchrotron x-ray scattering techniques. Current interests include the physics and technology of multifunctional oxides and topological chalcogenides, nanofabrication and electronic writing using scanning probe microscopies, electronic control of complex order parameters in correlated oxides and selenides, and development of nonvolatile logic switches for post-CMOS computing paradigms.
Fellow of the American Physical Society
Director, Yale Institute for Nanoscience and Quantum Engineering
Director, Yale SEAS Cleanroom
Director, Yale Center for Research on Interface Structures and Phenomena, an NSF MRSEC
G. Fabbris, D. Meyers, J. Okamoto, J. Pelliciari, A. S. Disa, Y. Huang, Z.-Y. Chen, W. B. Wu, C. T. Chen, S. Ismail-Beigi, C. H. Ahn, F. J. Walker, D. J. Huang, T. Schmitt, and M. P. M. Dean. Physical Review Letters, 117(14), 147401, 2016.
D. Kumah, M. Dogan, J. Ngai, D. Qiu, Z. Zhang, D. Su, E. D. Specht, S. Ismail-Beigi, C. Ahn, and F. Walker, Engineered Unique Elastic Modes at a BaTiO3/(2×1)−Ge(001) Interface. Physical Review Letters, 116, 106101, 2016.
K. Zou, S. Mandal, S. Albright, R. Peng, Y. Pu, D. Kumah, C. Lau, G. Simon, O. Dagdeviren, X. He, I. Božović, U. Schwarz, E. Altman, D. Feng, F. Walker, S. Ismail-Beigi, and C. Ahn, Role of double TiO2 layers at the interface of FeSe/SrTiO3 superconductors. Physical Review B 93, 180506(R), 2016.
A. Disa. D. Kumah, A. Malashevich, H. Chen, D. Arena, E. Specht, S. Ismail-Beigi, F. Walker, and C. Ahn, Orbital engineering in symmetry-breaking polar heterostructures. Physical Review Letters 114, 026801, 2015.
- C.H. Ahn, Y. Bason, X. Hong, L. Klein, J.-B. Yau, "Magnetoelectronic devices based on colossal magnetoresistive thin films"
- A. Kolpak, F. Walker, J. Reiner, C. Ahn, S. Ismail-Beigi, “Ferroelectric devices including a layer having two or more stable configurations”